| PART |
Description |
Maker |
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| 1N55 1N64 1N73 1N107 1N273 1N277 1N279 1N281 1N289 |
1N55
1N64
1N73
1N3082
1N3865
1W569 1W634
AA112 AA113 AA117 AA118 AA119
DR213
HG5007 HG50089
T7G T17G T19G
GERMANIUM DOIDES
GERMANIUM DOIDES
GERMANIUM DIODES
|
American Microsemiconductor Inc.
American Microsemicondu...
American Accurate Compo...
|
| BFP620F07 BFP620FH7764 BFP620F |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| 1N128 |
Germanium Diodes / Germanium Rectifiers
|
ETC
|
| BFP74009 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| BFP740FE6327 BFP740F07 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
California Eastern Labs
|
| NESG260234-T1 NESG260234 NESG260234-T1-AZ |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
CEL[California Eastern Labs]
|
| BFR750L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFU730LX-15 BFU730LX |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
